Infineon IPN N-Channel MOSFET, 100 A, 650 V, 3-Pin SOT-223 IPN60R360PFD7SATMA1
- RS stock no.:
- 244-2269
- Mfr. Part No.:
- IPN60R360PFD7SATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 146,51
(exc. VAT)
R 168,485
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,580 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 29.302 | R 146.51 |
| 10 - 95 | R 28.57 | R 142.85 |
| 100 - 245 | R 27.712 | R 138.56 |
| 250 - 495 | R 26.604 | R 133.02 |
| 500 + | R 25.54 | R 127.70 |
*price indicative
- RS stock no.:
- 244-2269
- Mfr. Part No.:
- IPN60R360PFD7SATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R360PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R360PFD7S in a SOT-223 package features RDS(on) of 360mOhm resulting in low switching losses.
Very low FOM RDS(on) x Eoss
Integrated robust fast body diode
Up to 2kV ESD protection
Wide range of RDS(on) values
Excellent commutation ruggedness
Low EMI
Broad package portfolio
Related links
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