Infineon Dual N Channel OptiMOSTM 2 Type N-Channel MOSFET & Diode, 40 A, 30 V, 8-Pin SuperSO8 5 x 6 BSC0924NDIATMA1
- RS stock no.:
- 244-1559
- Mfr. Part No.:
- BSC0924NDIATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 88,22
(exc. VAT)
R 101,455
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,805 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 17.644 | R 88.22 |
| 10 - 95 | R 17.202 | R 86.01 |
| 100 - 245 | R 16.686 | R 83.43 |
| 250 - 495 | R 16.018 | R 80.09 |
| 500 + | R 15.378 | R 76.89 |
*price indicative
- RS stock no.:
- 244-1559
- Mfr. Part No.:
- BSC0924NDIATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | OptiMOSTM | |
| Pin Count | 8 | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual N Channel | |
| Standards/Approvals | JEDEC1, IEC61249-2-22 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SuperSO8 5 x 6 | ||
Series OptiMOSTM | ||
Pin Count 8 | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual N Channel | ||
Standards/Approvals JEDEC1, IEC61249-2-22 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon has MOSFET which is OptiMOS power MOSFET,Integrated monolithic Schottky-like diode and Optimized for high performance Buck converter.
N Channel
100% Avalanche tested
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
Related links
- Infineon Dual N-Channel MOSFET + Diode 30 V, 8-Pin SuperSO8 5 x 6 BSC0924NDIATMA1
- Infineon Dual N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 IPG20N06S4L26ATMA1
- Infineon Dual N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 IPG20N06S415AATMA1
- Infineon Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 BSC072N04LDATMA1
- Infineon Dual N-Channel MOSFET Transistor 60 V, 8-Pin SuperSO8 5 x 6 IPG20N06S4L14AATMA1
- Infineon N-Channel MOSFET + Diode 30 V, 8-Pin SuperSO8 5 x 6 BSZ0503NSIATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET Transistor & Diode 40 V, 8-Pin SuperSO8 5 x 6 IPC90N04S53R6ATMA1
- Infineon OptiMOS™ 5 Dual N-Channel MOSFET Transistor & Diode 40 V, 8-Pin SuperSO8 5 x 6 IPC100N04S5L1R1ATMA1