Infineon Dual N Channel OptiMOSTM 2 Type N-Channel MOSFET & Diode, 40 A, 30 V, 8-Pin SuperSO8 5 x 6 BSC0924NDIATMA1

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Subtotal (1 pack of 5 units)*

R 85,80

(exc. VAT)

R 98,65

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 17.16R 85.80
10 - 95R 16.732R 83.66
100 - 245R 16.23R 81.15
250 - 495R 15.58R 77.90
500 +R 14.956R 74.78

*price indicative

Packaging Options:
RS stock no.:
244-1559
Mfr. Part No.:
BSC0924NDIATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOSTM

Package Type

SuperSO8 5 x 6

Pin Count

8

Typical Gate Charge Qg @ Vgs

6.7nC

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual N Channel

Standards/Approvals

JEDEC1, IEC61249-2-22

Number of Elements per Chip

2

Automotive Standard

No

The Infineon has MOSFET which is OptiMOS power MOSFET,Integrated monolithic Schottky-like diode and Optimized for high performance Buck converter.

N Channel

100% Avalanche tested

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

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