Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE008N03LM5ATMA1

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Subtotal (1 pack of 2 units)*

R 76,12

(exc. VAT)

R 87,54

(inc. VAT)

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  • 494 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 38.06R 76.12
10 - 98R 37.11R 74.22
100 - 248R 35.995R 71.99
250 - 498R 34.555R 69.11
500 +R 33.175R 66.35

*price indicative

Packaging Options:
RS stock no.:
240-6627
Mfr. Part No.:
IQE008N03LM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

IQE

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.85mΩ

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.73V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

AEC-Q101

The Infineon OptiMOSTM 5 30V PQFN 3.3x3.3 Source-Down features 30 V and low RDS(on) of 0.85 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.

Improved PCB losses

Enabling highest power density and performance

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