MPN

Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L

RS stock no.:: 239-8670
Mfr. Part No.:: SQJ186EP-T1_GE3
Manufacturer:: Vishay

Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L

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RS stock no.:: 239-8670
Mfr. Part No.:: SQJ186EP-T1_GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	410A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK SO-8L
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.02Ω
	Channel Mode	Depletion
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	255W
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	43nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	125°C
	Standards/Approvals	No
	Length	6.15mm
	Width	4.9 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 410A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK SO-8L
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.02Ω
	Channel Mode Depletion
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 255W
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 43nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 125°C
	Standards/Approvals No
	Length 6.15mm
	Width 4.9 mm
	Automotive Standard AEC-Q101

Datasheet - SQJ186EP-T1_GE3

The Vishay SIDR is automotive N-Channel MOSFET which operates at 80 V and 175 °C temperature. This MOSFET used for high power density.

AEC-Q101 qualified

UIS tested

Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L

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