Infineon ISZ080N10 Type N-Channel MOSFET, 75 A, 100 V, 8-Pin TSDSON ISZ080N10NM6ATMA1

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Subtotal (1 pack of 5 units)*

R 177,40

(exc. VAT)

R 204,00

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 35.48R 177.40
10 - 95R 34.594R 172.97
100 - 245R 33.556R 167.78
250 - 495R 32.214R 161.07
500 +R 30.926R 154.63

*price indicative

Packaging Options:
RS stock no.:
235-4883
Mfr. Part No.:
ISZ080N10NM6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

100V

Package Type

TSDSON

Series

ISZ080N10

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.04mΩ

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

3.4mm

Height

3.4mm

Automotive Standard

No

The Infineon OptiMOS™ 6 industrial power MOSFET 100V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.

Lower and softer reverse recovery charge

Ideal for high switching frequency

High avalanche energy rating

RoHS compliant

Low conduction losses

Low switching losses

Environmentally friendly

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