Infineon IPD Type P-Channel MOSFET, 13.9 A, 100 V Enhancement, 3-Pin TO-252 IPD18DP10LMATMA1
- RS stock no.:
- 235-4855
- Mfr. Part No.:
- IPD18DP10LMATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 152,92
(exc. VAT)
R 175,86
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,460 unit(s) shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 30.584 | R 152.92 |
| 10 - 95 | R 29.82 | R 149.10 |
| 100 - 245 | R 28.926 | R 144.63 |
| 250 - 495 | R 27.768 | R 138.84 |
| 500 + | R 26.658 | R 133.29 |
*price indicative
- RS stock no.:
- 235-4855
- Mfr. Part No.:
- IPD18DP10LMATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 13.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 178mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | -42nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 13.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 178mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs -42nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Available in 4 different packages
Wide range
Normal level and logic level availability
Ideal for high and low switching frequency
Easy Interface to MCU
Low design complexity
Related links
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