ROHM Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 R6509END3TL1

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Subtotal (1 pack of 5 units)*

R 266,99

(exc. VAT)

R 307,04

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 53.398R 266.99
50 - 95R 52.064R 260.32
100 - 245R 50.502R 252.51
250 - 995R 48.482R 242.41
1000 +R 46.542R 232.71

*price indicative

Packaging Options:
RS stock no.:
235-2690
Mfr. Part No.:
R6509END3TL1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

585mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

94W

Maximum Operating Temperature

150°C

Length

6.4mm

Width

2.4 mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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