ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504KND3TL1
- RS stock no.:
- 235-2682
- Mfr. Part No.:
- R6504KND3TL1
- Manufacturer:
- ROHM
Image representative of range
Subtotal (1 reel of 2500 units)*
R 29 602,50
(exc. VAT)
R 34 042,50
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | R 11.841 | R 29,602.50 |
*price indicative
- RS stock no.:
- 235-2682
- Mfr. Part No.:
- R6504KND3TL1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.05Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 58W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.4mm | |
| Standards/Approvals | No | |
| Width | 2.4 mm | |
| Height | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.05Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 58W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.4mm | ||
Standards/Approvals No | ||
Width 2.4 mm | ||
Height 10.4mm | ||
Automotive Standard No | ||
The ROHM R6xxxKNx series are high-speed switching products, super Junction MOSFET, that place an emphasis on high efficiency. It achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Low on-resistance
Ultra fast switching speed
Parallel use is easy
Pb-free plating
RoHS compliant
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