ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504END3TL1

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Subtotal (1 pack of 5 units)*

R 136,02

(exc. VAT)

R 156,425

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
Last RS stock
  • Final 90 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 45R 27.204R 136.02
50 - 95R 26.524R 132.62
100 - 245R 25.728R 128.64
250 - 995R 24.698R 123.49
1000 +R 23.71R 118.55

*price indicative

Packaging Options:
RS stock no.:
235-2681
Mfr. Part No.:
R6504END3TL1
Manufacturer:
ROHM
Find similar products by selecting one or more attributes.
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.05Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

58W

Maximum Operating Temperature

150°C

Length

6.4mm

Width

2.4 mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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