ROHM QH8KB5 Type N-Channel MOSFET, 4.5 A, 40 V Enhancement, 8-Pin TSMT-8 QH8KB5TCR
- RS stock no.:
- 235-2664
- Mfr. Part No.:
- QH8KB5TCR
- Manufacturer:
- ROHM
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 277,95
(exc. VAT)
R 319,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 11.118 | R 277.95 |
| 50 - 75 | R 10.84 | R 271.00 |
| 100 - 225 | R 10.514 | R 262.85 |
| 250 - 975 | R 10.094 | R 252.35 |
| 1000 + | R 9.69 | R 242.25 |
*price indicative
- RS stock no.:
- 235-2664
- Mfr. Part No.:
- QH8KB5TCR
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | QH8KB5 | |
| Package Type | TSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.1W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Height | 2.9mm | |
| Standards/Approvals | No | |
| Width | 0.85 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series QH8KB5 | ||
Package Type TSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.1W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Height 2.9mm | ||
Standards/Approvals No | ||
Width 0.85 mm | ||
Automotive Standard No | ||
The ROHM dual N channel MOSFET which supports 40V withstand voltage. This is designed for 24V input equipment's such as factory automation equipment's, and motors mounted on base stations. This product consists of a low on-resistance N channel MOSFET which is reduced 58%. This contributes to low power consumption of various devices.
Small surface mount package
Pb-free lead plating
RoHS compliant
Halogen Free
Related links
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