ROHM QH8KC6 Type N-Channel MOSFET, 5.5 A, 60 V Enhancement, 8-Pin TSMT-8 QH8KC6TCR

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Subtotal (1 pack of 10 units)*

R 123,11

(exc. VAT)

R 141,58

(inc. VAT)

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  • 20 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40R 12.311R 123.11
50 - 90R 12.003R 120.03
100 - 240R 11.643R 116.43
250 - 990R 11.177R 111.77
1000 +R 10.73R 107.30

*price indicative

Packaging Options:
RS stock no.:
235-2670
Mfr. Part No.:
QH8KC6TCR
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.5A

Maximum Drain Source Voltage Vds

60V

Series

QH8KC6

Package Type

TSMT-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.6nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

0.85 mm

Length

3.1mm

Height

2.9mm

Standards/Approvals

No

Automotive Standard

No

The ROHM dual N channel MOSFET which supports 60V withstand voltage. This is designed for 24V input equipment's such as factory automation equipment's, and motors mounted on base stations. This product consists of a low on-resistance N channel MOSFET which is reduced 58%. This contributes to low power consumption of various devices.

Small surface mount package

Pb-free lead plating

RoHS compliant

Halogen Free

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