Infineon IST Type N-Channel MOSFET, 440 A, 40 V Enhancement, 5-Pin HSOF IST007N04NM6AUMA1
- RS stock no.:
- 235-0607
- Mfr. Part No.:
- IST007N04NM6AUMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 2000 units)*
R 65 644,00
(exc. VAT)
R 75 490,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 28 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | R 32.822 | R 65,644.00 |
| 4000 - 4000 | R 32.002 | R 64,004.00 |
| 6000 + | R 31.042 | R 62,084.00 |
*price indicative
- RS stock no.:
- 235-0607
- Mfr. Part No.:
- IST007N04NM6AUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 440A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | HSOF | |
| Series | IST | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 7.2mm | |
| Standards/Approvals | No | |
| Width | 2.4 mm | |
| Length | 6.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 440A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type HSOF | ||
Series IST | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Height 7.2mm | ||
Standards/Approvals No | ||
Width 2.4 mm | ||
Length 6.9mm | ||
Automotive Standard No | ||
The Infineon OptiMOSTM6 power transistor operated on 40V and drain current of 440A.It is in Stoll package features very low RDS(on) of 0.70mOhm. It has the advantages of Infineons well-known quality level for robust industry packages making it the Ideal solution for various performance in battery powered applications, battery protection and battery formation.
Optimized for low voltage motor drives application
Optimized for battery power applications
Very low on-resistance RDS(on)
100% avalanche tested
Superior thermal performance
N-channel
Related links
- Infineon Silicon N-Channel MOSFET Transistor 40 V, 5-Pin HSOF-5 IST007N04NM6AUMA1
- Infineon Silicon N-Channel MOSFET Transistor 40 V, 5-Pin HSOF-5 IST006N04NM6AUMA1
- Infineon OptiMOS™ Silicon N-Channel MOSFET 40 V, 5-Pin HSOF-5 IAUA180N04S5N012AUMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 5-Pin HSOF-5 IAUA200N04S5N010AUMA1
- Infineon Silicon N-Channel MOSFET Transistor 100 V, 8-Pin SuperSO8 5 x 6 BSC0803LSATMA1
- Infineon IAU N-Channel MOSFET 40 V, 5-Pin PG-HSOF-5 IAUAN04S7N007AUMA1
- Vishay Silicon N-Channel MOSFET 40 V, 8-Pin SO-8 SIRS4400DP-T1-RE3
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 100 V, 8-Pin HSOF-8 IAUT150N10S5N035ATMA1
