Infineon CoolSiC Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 233-3490
- Mfr. Part No.:
- AIMW120R080M1XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 240 units)*
R 52 048,32
(exc. VAT)
R 59 855,52
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 240 - 240 | R 216.868 | R 52,048.32 |
| 480 - 480 | R 211.446 | R 50,747.04 |
| 720 + | R 205.103 | R 49,224.72 |
*price indicative
- RS stock no.:
- 233-3490
- Mfr. Part No.:
- AIMW120R080M1XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | CoolSiC | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 150W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 5.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 16.3mm | |
| Height | 5.3mm | |
| Width | 21.5 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series CoolSiC | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 150W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 5.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 16.3mm | ||
Height 5.3mm | ||
Width 21.5 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFETs for Automotive family has been developed for current and future on board charger and DC-DC applications in hybrid and electric vehicles. It has 33 A drain current.
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Related links
- Infineon CoolSiC SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 AIMW120R080M1XKSA1
- Infineon CoolSiC SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 AIMW120R035M1HXKSA1
- Infineon CoolSiC SiC N-Channel MOSFET 1200 V, 3-Pin TO-247 AIMW120R060M1HXKSA1
- onsemi NVHL SiC N-Channel MOSFET 1200 V, 3-Pin TO-247-3L NVHL070N120M3S
- Infineon CoolSiC Dual SiC N-Channel SiC Power Module 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
- Infineon AIM SiC N-Channel MOSFET 750 V, 7-Pin PG-TO263-7 AIMBG75R060M1HXTMA1
- Infineon AIM SiC N-Channel MOSFET 750 V, 22-Pin PG-HDSOP-22 AIMDQ75R060M1HXUMA1
- Infineon IMD SiC N-Channel MOSFET 750 V, 22-Pin PG-HDSOP-22 IMDQ75R060M1HXUMA1