Infineon CoolSiC N-Channel MOSFET, 5.4 A, 1.7 kV Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R1K0M1XKSA1

RS stock no.:: 349-108
Mfr. Part No.:: IMWH170R1K0M1XKSA1
Manufacturer:: Infineon

Infineon CoolSiC N-Channel MOSFET, 5.4 A, 1.7 kV Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R1K0M1XKSA1

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Subtotal (1 pack of 2 units)*

R 223,44

(exc. VAT)

R 256,96

(inc. VAT)

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Units	Per unit	Per Pack*
2 - 18	R 111.72	R 223.44
20 - 198	R 108.925	R 217.85
200 - 998	R 105.655	R 211.31
1000 - 1998	R 101.43	R 202.86
2000 +	R 97.375	R 194.75

*price indicative

RS stock no.:: 349-108
Mfr. Part No.:: IMWH170R1K0M1XKSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.4A
	Maximum Drain Source Voltage Vds	1.7kV
	Series	CoolSiC
	Package Type	PG-TO-247-3-STD-NN4.8
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	880mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	70W
	Maximum Gate Source Voltage Vgs	15V
	Typical Gate Charge Qg @ Vgs	5.5nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.4A
	Maximum Drain Source Voltage Vds 1.7kV
	Series CoolSiC
	Package Type PG-TO-247-3-STD-NN4.8
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 880mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 70W
	Maximum Gate Source Voltage Vgs 15V
	Typical Gate Charge Qg @ Vgs 5.5nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMWH170R1K0M1XKSA1

COO (Country of Origin):: CN

Infineon CoolSiC Series MOSFET, 1700V Drain Source Voltage, 5.4A Continuous Drain Current - IMWH170R1K0M1XKSA1

This MOSFET is a silicon carbide N-channel enhancement device designed for high-voltage power switching in demanding electronic systems. It operates across a wide temperature span and mounts via through-hole to provide robust thermal contact and straightforward assembly in power modules and discrete boards.

Features and Benefits:

• 1700V maximum drain-source voltage enables high-voltage switching
• 5.4A continuous drain current supports moderate power loads
• 70W maximum power dissipation manages substantial thermal stress
• 880 mΩ drain-source resistance reduces conduction losses
• 5.5 nC typical gate charge allows fast gate transitions
• 15V gate-source limit protects gate-drive circuitry

Applications

• Suitable for high-voltage power converters
• Ideal for industrial motor-drive front-ends
• Used with battery management in high-voltage systems
• Can be used for renewable-energy inverter stages
• Suitable for laboratory power supplies and test rigs

What mounting method does it require for installations?

It uses a through-hole package which is compatible with hand soldering and wave-solder assembly and offers solid mechanical anchoring for heatsinking arrangements.

How does the device cope with elevated ambient temperatures?

The component is specified to operate from -55 °C up to 175 °C, allowing use in environments with wide thermal variation and permitting designs with conservative derating for lifetime.

What electrical polarity and control mode should designers expect?

It is an N-channel device operating in enhancement mode, requiring a positive gate-source drive relative to the source to switch on.

Are there any regulatory material restrictions relevant to procurement?

The part is manufactured to be RoHS-compliant, meeting restrictions on certain hazardous substances for electronic components.