Infineon OptiMOS 5 Type N-Channel MOSFET, 135 A, 60 V, 8-Pin SO-8 ISC0702NLSATMA1

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Subtotal (1 pack of 5 units)*

R 146,37

(exc. VAT)

R 168,325

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 29.274R 146.37
10 - 95R 28.542R 142.71
100 - 245R 27.686R 138.43
250 - 495R 26.578R 132.89
500 +R 25.514R 127.57

*price indicative

Packaging Options:
RS stock no.:
232-6753
Mfr. Part No.:
ISC0702NLSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

135A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS 5

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Typical Gate Charge Qg @ Vgs

56nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

100W

Maximum Operating Temperature

175°C

Height

5.35mm

Standards/Approvals

No

Width

1.2 mm

Length

6.1mm

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 60 V, are designed targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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