Infineon OptiMOS 5 Type N-Channel MOSFET, 135 A, 60 V, 8-Pin SO-8 ISC0702NLSATMA1

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Subtotal (1 pack of 5 units)*

R 176,31

(exc. VAT)

R 202,755

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 35.262R 176.31
10 - 95R 34.38R 171.90
100 - 245R 33.348R 166.74
250 - 495R 32.014R 160.07
500 +R 30.734R 153.67

*price indicative

Packaging Options:
RS stock no.:
232-6753
Mfr. Part No.:
ISC0702NLSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

135A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.1mm

Width

1.2 mm

Standards/Approvals

No

Height

5.35mm

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 60 V, are designed targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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