Infineon CoolMOS Type N-Channel MOSFET, 106 A, 650 V, 3-Pin TO-247 IPW65R018CFD7XKSA1
- RS stock no.:
- 232-3049
- Mfr. Part No.:
- IPW65R018CFD7XKSA1
- Manufacturer:
- Infineon
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R 270,58
(exc. VAT)
R 311,17
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 270.58 |
| 10 - 99 | R 263.82 |
| 100 - 249 | R 255.91 |
| 250 - 499 | R 245.67 |
| 500 + | R 235.84 |
*price indicative
- RS stock no.:
- 232-3049
- Mfr. Part No.:
- IPW65R018CFD7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 106A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Maximum Power Dissipation Pd | 500W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 106A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Maximum Power Dissipation Pd 500W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 21.1mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CFD7 is super junction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and further more supports high power density solutions.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Related links
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- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R041P6FKSA1