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Infineon CoolMOS N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-247 IPW60R170CFD7XKSA1

RS stock no.:: 222-4722
Mfr. Part No.:: IPW60R170CFD7XKSA1
Manufacturer:: Infineon

Infineon CoolMOS N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-247 IPW60R170CFD7XKSA1

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Subtotal (1 tube of 30 units)*

R 1 708,02

(exc. VAT)

R 1 964,22

(inc. VAT)

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Units	Per unit	Per Tube*
30 - 60	R 56.934	R 1,708.02
90 - 120	R 55.51	R 1,665.30
150 +	R 53.845	R 1,615.35

*price indicative

RS stock no.:: 222-4722
Mfr. Part No.:: IPW60R170CFD7XKSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	28nC
	Maximum Power Dissipation Pd	75W
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Height	5.21mm
	Length	16.13mm
	Width	21.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 28nC
	Maximum Power Dissipation Pd 75W
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Height 5.21mm
	Length 16.13mm
	Width 21.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPW60R170CFD7XKSA1

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

Infineon CoolMOS N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-247 IPW60R170CFD7XKSA1

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