onsemi SUPERFET III Type N-Channel MOSFET & Diode, 24 A, 650 V Enhancement, 3-Pin TO-263 FCB125N65S3
- RS stock no.:
- 205-2470
- Mfr. Part No.:
- FCB125N65S3
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 363,25
(exc. VAT)
R 417,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 715 unit(s) shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 72.65 | R 363.25 |
| 10 - 45 | R 70.834 | R 354.17 |
| 50 - 95 | R 68.708 | R 343.54 |
| 100 - 395 | R 65.96 | R 329.80 |
| 400 + | R 63.322 | R 316.61 |
*price indicative
- RS stock no.:
- 205-2470
- Mfr. Part No.:
- FCB125N65S3
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 181W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Width | 9.6 mm | |
| Standards/Approvals | RoHS | |
| Length | 14.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 181W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Width 9.6 mm | ||
Standards/Approvals RoHS | ||
Length 14.6mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III series N-Channel MOSFET is high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Continuous Drain Current rating is 24A
Drain to source on resistance rating is 125mohm
Ultra low gate charge
Low stored energy in output capacitance
100% avalanche tested
Package type is D2-PAK
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