STMicroelectronics Single RF2L Type N-Channel MOSFET, 60 V Enhancement, 2-Pin B-2 RF2L36075CF2
- RS stock no.:
- 230-0088
- Mfr. Part No.:
- RF2L36075CF2
- Manufacturer:
- STMicroelectronics
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Subtotal (1 unit)*
R 2 518,21
(exc. VAT)
R 2 895,94
(inc. VAT)
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In Stock
- 30 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | R 2,518.21 |
| 10 - 99 | R 2,455.25 |
| 100 - 249 | R 2,381.59 |
| 250 - 499 | R 2,286.33 |
| 500 + | R 2,194.88 |
*price indicative
- RS stock no.:
- 230-0088
- Mfr. Part No.:
- RF2L36075CF2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Operating Frequency | 3.5 GHz | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | B-2 | |
| Series | RF2L | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Channel Mode | Enhancement | |
| Maximum Operating Temperature | 200°C | |
| Transistor Configuration | Single | |
| Length | 20.57mm | |
| Width | 19.44 mm | |
| Standards/Approvals | RoHS | |
| Height | 3.61mm | |
| Typical Power Gain | 12.5dB | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Operating Frequency 3.5 GHz | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type B-2 | ||
Series RF2L | ||
Mount Type Surface | ||
Pin Count 2 | ||
Channel Mode Enhancement | ||
Maximum Operating Temperature 200°C | ||
Transistor Configuration Single | ||
Length 20.57mm | ||
Width 19.44 mm | ||
Standards/Approvals RoHS | ||
Height 3.61mm | ||
Typical Power Gain 12.5dB | ||
Automotive Standard No | ||
The STMicroelectronics RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from 3.1 to 3.6 GHz. It can be used in class AB, B or C for all typical cellular base station modulation formats.
High efficiency and linear gain operations
Integrated ESD protection
Internal input matching for ease of use
Large positive and negative gate-source voltage range for improved class C operation
Excellent thermal stability, low HCI drift
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