onsemi SUPERFET III Type N-Channel MOSFET, 16 A, 650 V N, 3-Pin TO-220 NTPF190N65S3H
- RS stock no.:
- 229-6497
- Mfr. Part No.:
- NTPF190N65S3H
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 175,83
(exc. VAT)
R 202,204
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 980 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 87.915 | R 175.83 |
| 10 - 98 | R 85.715 | R 171.43 |
| 100 - 248 | R 83.145 | R 166.29 |
| 250 - 498 | R 79.82 | R 159.64 |
| 500 + | R 76.625 | R 153.25 |
*price indicative
- RS stock no.:
- 229-6497
- Mfr. Part No.:
- NTPF190N65S3H
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 32W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 29.95mm | |
| Length | 10.63mm | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 32W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 29.95mm | ||
Length 10.63mm | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPER FET series is brand new high voltage super junction MOSFET that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Low effective output capacitance
100% avalanche tested
Higher system reliability at low temperature operation
Pb−free
RoHS compliant
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