onsemi SUPERFET III Type N-Channel MOSFET, 19 A, 650 V N, 3-Pin TO-220 NTPF165N65S3H
- RS stock no.:
- 229-6495
- Mfr. Part No.:
- NTPF165N65S3H
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 158,79
(exc. VAT)
R 182,608
(inc. VAT)
Add 20 units to get free delivery
Temporarily out of stock
- Shipping from 20 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 79.395 | R 158.79 |
| 10 - 98 | R 77.41 | R 154.82 |
| 100 - 248 | R 75.09 | R 150.18 |
| 250 - 498 | R 72.085 | R 144.17 |
| 500 + | R 69.20 | R 138.40 |
*price indicative
- RS stock no.:
- 229-6495
- Mfr. Part No.:
- NTPF165N65S3H
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | SUPERFET III | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 33W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 29.95mm | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Length | 10.63mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series SUPERFET III | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 33W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 29.95mm | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Length 10.63mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPER FET series is brand new high voltage super junction MOSFET that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Low effective output capacitance
100% avalanche tested
Higher system reliability at low temperature operation
Pb−free
RoHS compliant
Related links
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220 FCP165N65S3
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220