onsemi SUPERFET III N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252 NTD360N65S3H
- RS stock no.:
- 229-6453
- Mfr. Part No.:
- NTD360N65S3H
- Manufacturer:
- onsemi
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 244,87
(exc. VAT)
R 281,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 14,855 unit(s) shipping from 15 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 48.974 | R 244.87 |
| 10 - 95 | R 47.75 | R 238.75 |
| 100 - 245 | R 46.318 | R 231.59 |
| 250 - 495 | R 44.466 | R 222.33 |
| 500 + | R 42.688 | R 213.44 |
*price indicative
- RS stock no.:
- 229-6453
- Mfr. Part No.:
- NTD360N65S3H
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | SUPERFET III | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 17.5nC | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 2.39mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series SUPERFET III | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 17.5nC | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 2.39mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.
Features
• 700 V @ TJ = 150°C
• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)
• Fast switching performance with robust body diode
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 296 m
• Internal Gate Resistance: 0.9
Related links
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-252
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- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220 FCPF360N65S3R0L-F154
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220 NTPF360N65S3H
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-252
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-252 NTD250N65S3H
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220