Vishay TrenchFET N-Channel MOSFET, 18 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SQSA12CENW-T1_GE3
- RS stock no.:
- 228-2970
- Mfr. Part No.:
- SQSA12CENW-T1_GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 180,33
(exc. VAT)
R 207,38
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,970 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 18.033 | R 180.33 |
| 50 - 90 | R 17.582 | R 175.82 |
| 100 - 240 | R 17.055 | R 170.55 |
| 250 - 990 | R 16.373 | R 163.73 |
| 1000 + | R 15.718 | R 157.18 |
*price indicative
- RS stock no.:
- 228-2970
- Mfr. Part No.:
- SQSA12CENW-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive N-channel is 100 V power MOSFET.
100 % Rg and UIS tested
Related links
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