Vishay TrenchFET Type N-Channel MOSFET, 77.4 A, 150 V Enhancement, 8-Pin SO-8 SiR570DP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 340,69

(exc. VAT)

R 391,795

(inc. VAT)

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  • 5,975 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45R 68.138R 340.69
50 - 95R 66.434R 332.17
100 - 245R 64.44R 322.20
250 - 995R 61.862R 309.31
1000 +R 59.388R 296.94

*price indicative

Packaging Options:
RS stock no.:
228-2906
Mfr. Part No.:
SiR570DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

77.4A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

46.9nC

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 150 V MOSFET.

100 % Rg and UIS tested

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