Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3
- RS stock no.:
- 228-2887
- Mfr. Part No.:
- SiJ450DP-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 119,06
(exc. VAT)
R 136,92
(inc. VAT)
Add 65 units to get free delivery
In Stock
- 5,995 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 23.812 | R 119.06 |
| 50 - 95 | R 23.216 | R 116.08 |
| 100 - 245 | R 22.52 | R 112.60 |
| 250 - 995 | R 21.62 | R 108.10 |
| 1000 + | R 20.756 | R 103.78 |
*price indicative
- RS stock no.:
- 228-2887
- Mfr. Part No.:
- SiJ450DP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 113A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 75.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 113A | ||
Maximum Drain Source Voltage Vds 45V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 75.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 45 V MOSFET.
100 % Rg and UIS tested
Related links
- Vishay TrenchFET Type N-Channel MOSFET 45 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 45 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 45 V Enhancement, 8-Pin SO-8 SiR450DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 25 V Enhancement, 4-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SIJA74DP-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 25 V Enhancement, 4-Pin SO-8 SiJA22DP-T1-GE3
- Vishay TrenchFET Gen IV Type N-Channel MOSFET 45 V Enhancement, 4-Pin SO-8