Vishay TrenchFET Type N-Channel MOSFET, 113 A, 45 V Enhancement, 4-Pin SO-8 SiJ450DP-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 117,27

(exc. VAT)

R 134,86

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 5,995 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45R 23.454R 117.27
50 - 95R 22.868R 114.34
100 - 245R 22.182R 110.91
250 - 995R 21.294R 106.47
1000 +R 20.442R 102.21

*price indicative

Packaging Options:
RS stock no.:
228-2887
Mfr. Part No.:
SiJ450DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

75.5nC

Maximum Power Dissipation Pd

48W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 45 V MOSFET.

100 % Rg and UIS tested

Related links