Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 55 V Enhancement, 8-Pin TDSON IPG20N06S2L65AATMA1
- RS stock no.:
- 223-8520
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 15 units)*
R 265,605
(exc. VAT)
R 305,445
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 19,950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 17.707 | R 265.61 |
| 30 - 75 | R 17.265 | R 258.98 |
| 90 - 225 | R 16.747 | R 251.21 |
| 240 - 465 | R 16.077 | R 241.16 |
| 480 + | R 15.433 | R 231.50 |
*price indicative
- RS stock no.:
- 223-8520
- Mfr. Part No.:
- IPG20N06S2L65AATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 43W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.15mm | |
| Width | 5.9 mm | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 43W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Length 5.15mm | ||
Width 5.9 mm | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 55 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
Related links
- Infineon OptiMOS™ Dual N-Channel MOSFET 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 8-Pin TDSON BSC123N08NS3GATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 8-Pin TDSON BSZ100N06LS3GATMA1
- Infineon Dual N-Channel MOSFET 40 V, 8-Pin TDSON BSC076N04NDATMA1
- Infineon OptiMOS™ Dual N-Channel MOSFET 60 V, 8-Pin TDSON IPG20N06S4L26AATMA1
- Infineon N-Channel MOSFET 55 V PG-TDSON-8-10 IPG20N06S2L35AATMA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 40 V, 8-Pin TDSON BSC050N04LSGATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin TDSON-8 FL ISC017N04NM5ATMA1