Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON
- RS stock no.:
- 214-9057
- Mfr. Part No.:
- IPG16N10S461AATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 5000 units)*
R 36 795,00
(exc. VAT)
R 42 315,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | R 7.359 | R 36,795.00 |
| 10000 - 10000 | R 7.175 | R 35,875.00 |
| 15000 + | R 6.96 | R 34,800.00 |
*price indicative
- RS stock no.:
- 214-9057
- Mfr. Part No.:
- IPG16N10S461AATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 61mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 29W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 61mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 29W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Height 1mm | ||
Width 5.9 mm | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Normal Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
Related links
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG16N10S461AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S408AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L08AATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S409ATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L11AATMA1
- Infineon OptiMOS™ -T2 Dual Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S412AATMA1