Infineon HEXFET Type N-Channel MOSFET, 345 A, 60 V, 8-Pin DirectFET AUIRF7749L2TR
- RS stock no.:
- 223-8455
- Mfr. Part No.:
- AUIRF7749L2TR
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 267,56
(exc. VAT)
R 307,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,828 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 133.78 | R 267.56 |
| 10 - 98 | R 130.435 | R 260.87 |
| 100 - 248 | R 126.52 | R 253.04 |
| 250 - 498 | R 121.46 | R 242.92 |
| 500 + | R 116.60 | R 233.20 |
*price indicative
- RS stock no.:
- 223-8455
- Mfr. Part No.:
- AUIRF7749L2TR
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 345A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 60 V | |
| Maximum Power Dissipation Pd | 341W | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 345A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 60 V | ||
Maximum Power Dissipation Pd 341W | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon single N-channel HEXFET power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging platform coupled with the latest silicon technology allows this MOSFET to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications.
Advanced process technology
Exceptionally small footprint and low profile
High power density
Low parasitic parameters
Dual sided cooling
175°C Operating temperature
Lead free
RoHS compliant
Halogen free
Automotive qualified
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