Infineon IPN70R Type N-Channel MOSFET, 3 A, 700 V Enhancement, 3-Pin SOT-223

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Subtotal (1 reel of 3000 units)*

R 10 458,00

(exc. VAT)

R 12 027,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000R 3.486R 10,458.00
6000 - 6000R 3.398R 10,194.00
9000 +R 3.296R 9,888.00

*price indicative

RS stock no.:
222-4921
Mfr. Part No.:
IPN70R2K0P7SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

700V

Series

IPN70R

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

6W

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

3.8nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.7mm

Standards/Approvals

No

Height

1.8mm

Width

3.7 mm

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Enabling lower MOSFET chip temperature

Leading to higher efficency compared to previous technologies

Allowing improved form factors and slim designs

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