Infineon IPN Type N-Channel MOSFET, 6.5 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R750P7SATMA1

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Subtotal (1 pack of 50 units)*

R 388,80

(exc. VAT)

R 447,10

(inc. VAT)

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  • 7,600 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
50 - 50R 7.776R 388.80
100 - 100R 7.581R 379.05
150 - 200R 7.354R 367.70
250 - 450R 7.06R 353.00
500 +R 6.777R 338.85

*price indicative

Packaging Options:
RS stock no.:
217-2550
Mfr. Part No.:
IPN70R750P7SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

700V

Series

IPN

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.3nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

6.7W

Maximum Operating Temperature

150°C

Height

1.8mm

Length

6.7mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.

Best-fit performance superjunction technology

Cost-effective package solution

Best-in-class price/performance ratio

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