Infineon IMBF1 Type N-Channel MOSFET, 7.4 A, 1700 V Enhancement, 7-Pin TO-263
- RS stock no.:
- 222-4850
- Mfr. Part No.:
- IMBF170R650M1XTMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 1000 units)*
R 43 769,00
(exc. VAT)
R 50 334,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 43.769 | R 43,769.00 |
| 2000 - 2000 | R 42.675 | R 42,675.00 |
| 3000 + | R 41.394 | R 41,394.00 |
*price indicative
- RS stock no.:
- 222-4850
- Mfr. Part No.:
- IMBF170R650M1XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.4A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO-263 | |
| Series | IMBF1 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.4A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO-263 | ||
Series IMBF1 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
Optimized for fly-back topologies
Extremely low switching loss
12 V / 0 V gate-source voltage compatible with fly-back controllers
Fully controllable dV/dt for EMI optimization
SMD package with enhanced creepage and clearance distances, > 7 mm
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