Infineon IMBF1 Type N-Channel MOSFET, 7.4 A, 1700 V Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1
- RS stock no.:
- 222-4851
- Mfr. Part No.:
- IMBF170R650M1XTMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 180,78
(exc. VAT)
R 207,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 610 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 90.39 | R 180.78 |
| 10 - 98 | R 88.13 | R 176.26 |
| 100 - 248 | R 85.485 | R 170.97 |
| 250 - 498 | R 82.065 | R 164.13 |
| 500 + | R 78.78 | R 157.56 |
*price indicative
- RS stock no.:
- 222-4851
- Mfr. Part No.:
- IMBF170R650M1XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.4A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO-263 | |
| Series | IMBF1 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.4A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO-263 | ||
Series IMBF1 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
Optimized for fly-back topologies
Extremely low switching loss
12 V / 0 V gate-source voltage compatible with fly-back controllers
Fully controllable dV/dt for EMI optimization
SMD package with enhanced creepage and clearance distances, > 7 mm
Related links
- Infineon IMBF1 Type N-Channel MOSFET 1700 V Enhancement, 7-Pin TO-263
- Infineon IMBF1 Type N-Channel MOSFET 1700 V Enhancement, 7-Pin TO-263
- Infineon IMBF1 Type N-Channel MOSFET 1700 V Enhancement, 7-Pin TO-263 IMBF170R1K0M1XTMA1
- Wolfspeed Type N-Channel MOSFET 1700 V Enhancement, 7-Pin TO-263
- Wolfspeed Type N-Channel MOSFET 1700 V Enhancement, 7-Pin TO-263 C2M1000170J
- Littelfuse LSIC1MO170T0750 Type N-Channel MOSFET 1700 V Enhancement, 7-Pin TO-263 LSIC1MO170T0750-TU
- Littelfuse LSIC1MO170T0750 Type N-Channel MOSFET 1700 V Enhancement, 7-Pin TO-263
- Wolfspeed Series Type N-Channel Power MOSFET 1700 V Enhancement, 7-Pin