Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 80 V Enhancement, 3-Pin TO-252 IPD80R2K8CEATMA1
- RS stock no.:
- 222-4675
- Mfr. Part No.:
- IPD80R2K8CEATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 15 units)*
R 226,95
(exc. VAT)
R 261,00
(inc. VAT)
Add 105 units to get free delivery
In Stock
- 1,875 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 15.13 | R 226.95 |
| 30 - 75 | R 14.752 | R 221.28 |
| 90 - 225 | R 14.309 | R 214.64 |
| 240 - 465 | R 13.737 | R 206.06 |
| 480 + | R 13.187 | R 197.81 |
*price indicative
- RS stock no.:
- 222-4675
- Mfr. Part No.:
- IPD80R2K8CEATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-252 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-252 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Related links
- Infineon CoolMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R3K3P7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-252 IPD90N08S405ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 IPP020N08N5AKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252