Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1

RS stock no.:: 220-7407
Mfr. Part No.:: IPD60R170CFD7ATMA1
Manufacturer:: Infineon

Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 198,15

(exc. VAT)

R 227,85

(inc. VAT)

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Units	Per unit	Per Pack*
5 - 5	R 39.63	R 198.15
10 - 95	R 38.64	R 193.20
100 - 245	R 37.48	R 187.40
250 - 495	R 35.98	R 179.90
500 +	R 34.54	R 172.70

*price indicative

RS stock no.:: 220-7407
Mfr. Part No.:: IPD60R170CFD7ATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	51A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-252
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	76W
	Typical Gate Charge Qg @ Vgs	28nC
	Height	2.41mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 51A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-252
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 76W
	Typical Gate Charge Qg @ Vgs 28nC
	Height 2.41mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD60R170CFD7ATMA1

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1

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