Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1
- RS stock no.:
- 220-7407
- Mfr. Part No.:
- IPD60R170CFD7ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 206,85
(exc. VAT)
R 237,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,310 unit(s) shipping from 20 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 41.37 | R 206.85 |
| 10 - 95 | R 40.336 | R 201.68 |
| 100 - 245 | R 39.126 | R 195.63 |
| 250 - 495 | R 37.56 | R 187.80 |
| 500 + | R 36.058 | R 180.29 |
*price indicative
- RS stock no.:
- 220-7407
- Mfr. Part No.:
- IPD60R170CFD7ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 76W | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 76W | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
Related links
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- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-251 IPS60R1K0CEAKMA1
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