DiodesZetex DMP Type P-Channel MOSFET, 192 mA, 65 V Enhancement, 3-Pin X1-DFN DMP68D0LFB-7B
- RS stock no.:
- 222-2864
- Mfr. Part No.:
- DMP68D0LFB-7B
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 50 units)*
R 126,05
(exc. VAT)
R 144,95
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 9,700 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 450 | R 2.521 | R 126.05 |
| 500 - 950 | R 2.458 | R 122.90 |
| 1000 - 2450 | R 2.384 | R 119.20 |
| 2500 - 4950 | R 2.289 | R 114.45 |
| 5000 + | R 2.197 | R 109.85 |
*price indicative
- RS stock no.:
- 222-2864
- Mfr. Part No.:
- DMP68D0LFB-7B
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 192mA | |
| Maximum Drain Source Voltage Vds | 65V | |
| Series | DMP | |
| Package Type | X1-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.21W | |
| Forward Voltage Vf | -1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.08mm | |
| Standards/Approvals | No | |
| Width | 0.68 mm | |
| Height | 0.53mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 192mA | ||
Maximum Drain Source Voltage Vds 65V | ||
Series DMP | ||
Package Type X1-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.21W | ||
Forward Voltage Vf -1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 1.08mm | ||
Standards/Approvals No | ||
Width 0.68 mm | ||
Height 0.53mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex P-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
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