DiodesZetex DMP Type P-Channel MOSFET, 10.7 A, 12 V Enhancement, 3-Pin X1-DFN1006-3 DMP2900UFB-7B
- RS stock no.:
- 254-8624
- Mfr. Part No.:
- DMP2900UFB-7B
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 101,175
(exc. VAT)
R 116,35
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 9,500 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 475 | R 4.047 | R 101.18 |
| 500 - 975 | R 3.946 | R 98.65 |
| 1000 - 2475 | R 3.827 | R 95.68 |
| 2500 - 4975 | R 3.674 | R 91.85 |
| 5000 + | R 3.527 | R 88.18 |
*price indicative
- RS stock no.:
- 254-8624
- Mfr. Part No.:
- DMP2900UFB-7B
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMP | |
| Package Type | X1-DFN1006-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Length | 1.07mm | |
| Standards/Approvals | No | |
| Width | 0.67 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMP | ||
Package Type X1-DFN1006-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Length 1.07mm | ||
Standards/Approvals No | ||
Width 0.67 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in load switches and po
Low on resistance
Fast switching speed
Halogen and antimony Free
Related links
- Diodes Inc P-Channel MOSFET 20 V X1-DFN1006-3 DMP2900UFB-7B
- onsemi N-Channel MOSFET 20 V, 3-Pin SOT-723 NTK3134NT1G
- Diodes Inc DSS3540MQ-7B PNP Transistor -40 V X1-DFN1006-3
- Diodes Inc D3V3L2BS3LP-7B 3-Pin X1-DFN1006-3
- Diodes Inc D5V0F2U3LPQ-7B 2-Pin X1-DFN1006-3
- Diodes Inc D5V0F2U3LP-7B 3-Pin X1-DFN1006-3
- Diodes Inc N-Channel MOSFET 12 V, 3-Pin X1-DFN1006 DMN1150UFB-7B
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin X1-DFN1006 DMN62D1LFB-7B