DiodesZetex DMP Type P-Channel MOSFET, 10.7 A, 12 V Enhancement, 3-Pin X1-DFN1006-3 DMP2900UFB-7B
- RS stock no.:
- 254-8624
- Mfr. Part No.:
- DMP2900UFB-7B
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 96,925
(exc. VAT)
R 111,475
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 9,500 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 475 | R 3.877 | R 96.93 |
| 500 - 975 | R 3.78 | R 94.50 |
| 1000 - 2475 | R 3.667 | R 91.68 |
| 2500 - 4975 | R 3.52 | R 88.00 |
| 5000 + | R 3.379 | R 84.48 |
*price indicative
- RS stock no.:
- 254-8624
- Mfr. Part No.:
- DMP2900UFB-7B
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMP | |
| Package Type | X1-DFN1006-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 1.07mm | |
| Width | 0.67 mm | |
| Height | 5.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMP | ||
Package Type X1-DFN1006-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 1.07mm | ||
Width 0.67 mm | ||
Height 5.3mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in load switches and po
Low on resistance
Fast switching speed
Halogen and antimony Free
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