DiodesZetex DMP Type P-Channel MOSFET, 200 mA, 30 V Enhancement, 3-Pin X2-DFN DMP32D9UFO-7B
- RS stock no.:
- 222-2860
- Mfr. Part No.:
- DMP32D9UFO-7B
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 26,95
(exc. VAT)
R 31,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 13 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 450 | R 0.539 | R 26.95 |
| 500 - 950 | R 0.526 | R 26.30 |
| 1000 - 2450 | R 0.51 | R 25.50 |
| 2500 - 4950 | R 0.49 | R 24.50 |
| 5000 + | R 0.47 | R 23.50 |
*price indicative
- RS stock no.:
- 222-2860
- Mfr. Part No.:
- DMP32D9UFO-7B
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | X2-DFN | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.35nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 320mW | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 0.65mm | |
| Width | 0.45 mm | |
| Standards/Approvals | No | |
| Height | 0.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type X2-DFN | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.35nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 320mW | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 150°C | ||
Length 0.65mm | ||
Width 0.45 mm | ||
Standards/Approvals No | ||
Height 0.4mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex P-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low Package Profile
Low On-Resistance
ESD Protected Gate
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