DiodesZetex DMP Type P-Channel MOSFET, 4.7 A, 20 V Enhancement, 3-Pin X2-DFN DMP2045UFY4-7
- RS stock no.:
- 182-7118
- Mfr. Part No.:
- DMP2045UFY4-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 100 units)*
R 190,60
(exc. VAT)
R 219,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,000 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | R 1.906 | R 190.60 |
| 200 - 400 | R 1.858 | R 185.80 |
| 500 - 900 | R 1.803 | R 180.30 |
| 1000 - 1900 | R 1.731 | R 173.10 |
| 2000 + | R 1.661 | R 166.10 |
*price indicative
- RS stock no.:
- 182-7118
- Mfr. Part No.:
- DMP2045UFY4-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMP | |
| Package Type | X2-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.49W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.07mm | |
| Width | 1.57 mm | |
| Height | 0.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMP | ||
Package Type X2-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.49W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.07mm | ||
Width 1.57 mm | ||
Height 0.35mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Related links
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