DiodesZetex DMG1012UWQ N-Channel MOSFET, 950 mA, 20 V Enhancement, 3-Pin SOT-323 DMG1012UWQ-7

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Subtotal (1 pack of 50 units)*

R 185,45

(exc. VAT)

R 213,25

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 50R 3.709R 185.45
100 - 200R 3.616R 180.80
250 - 450R 3.508R 175.40
500 - 950R 3.368R 168.40
1000 +R 3.233R 161.65

*price indicative

Packaging Options:
RS stock no.:
222-2825
Mfr. Part No.:
DMG1012UWQ-7
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

950mA

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-323

Series

DMG1012UWQ

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

6V

Maximum Power Dissipation Pd

0.29W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

2.2mm

Standards/Approvals

No

Height

1.1mm

Width

1.35mm

Automotive Standard

AEC-Q101

The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

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