Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 205 A, 40 V Enhancement, 8-Pin TDSON
- RS stock no.:
- 220-7349
- Mfr. Part No.:
- BSC014N04LSTATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 5000 units)*
R 63 920,00
(exc. VAT)
R 73 510,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 07 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | R 12.784 | R 63,920.00 |
| 10000 - 10000 | R 12.464 | R 62,320.00 |
| 15000 + | R 12.09 | R 60,450.00 |
*price indicative
- RS stock no.:
- 220-7349
- Mfr. Part No.:
- BSC014N04LSTATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 205A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS 5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 205A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS 5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Operating Temperature 175°C | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.
Low RDS(on)
Optimized for synchronous rectification
Enhanced 175°C capability in SuperSO8
Longer life time
Highest efficiency and power density
Highest system reliability
Thermal robustness
Related links
- Infineon OptiMOS™ 5 Dual N-Channel MOSFET Transistor & Diode 40 V, 8-Pin TDSON BSC014N04LSTATMA1
- Infineon OptiMOS™ 5 Dual N-Channel MOSFET Transistor & Diode 40 V, 8-Pin SuperSO8 5 x 6 IPC100N04S5L1R1ATMA1
- Infineon OptiMOS™ Dual N-Channel MOSFET Transistor & Diode 60 V, 8-Pin SuperSO8 5 x 6 BSC028N06NSTATMA1
- Infineon OptiMOS™ 5 Dual N-Channel MOSFET Transistor & Diode 40 V, 7-Pin D2PAK IPB011N04LGATMA1
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin TDSON ISC080N10NM6ATMA1
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin TDSON ISC230N10NM6ATMA1
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin TDSON ISC027N10NM6ATMA1
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin TDSON ISC030N10NM6ATMA1