Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 180 A, 80 V Enhancement, 3-Pin TO-263 IPB019N08N3GATMA1
- RS stock no.:
- 220-7376
- Mfr. Part No.:
- IPB019N08N3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 131,75
(exc. VAT)
R 151,512
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 934 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 65.875 | R 131.75 |
| 10 - 98 | R 64.23 | R 128.46 |
| 100 - 248 | R 62.305 | R 124.61 |
| 250 - 498 | R 59.815 | R 119.63 |
| 500 + | R 57.42 | R 114.84 |
*price indicative
- RS stock no.:
- 220-7376
- Mfr. Part No.:
- IPB019N08N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-263 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-263 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Optimized technology for DC-DC converters
Excellent gate charge x R DS(ON) product (FOM)
Superior thermal resistance
Dual sided cooling
Low parasitic inductance
Low profile (<0,7mm)
N-channel, normal level
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