Infineon CoolMOS CSFD Type N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247 IPW60R024CFD7XKSA1
- RS stock no.:
- 219-6017
- Mfr. Part No.:
- IPW60R024CFD7XKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
R 241,58
(exc. VAT)
R 277,82
(inc. VAT)
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- 47 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | R 241.58 |
| 10 - 99 | R 235.54 |
| 100 - 249 | R 228.47 |
| 250 - 499 | R 219.33 |
| 500 + | R 210.56 |
*price indicative
- RS stock no.:
- 219-6017
- Mfr. Part No.:
- IPW60R024CFD7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS CSFD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 320W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Standards/Approvals | No | |
| Width | 21.1 mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS CSFD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 320W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Standards/Approvals No | ||
Width 21.1 mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon CoolMOS CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Related links
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- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247