Infineon CoolMOS CSFD Type N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 219-6016
- Mfr. Part No.:
- IPW60R024CFD7XKSA1
- Manufacturer:
- Infineon
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Subtotal (1 tube of 30 units)*
R 4 257,18
(exc. VAT)
R 4 895,76
(inc. VAT)
Add 30 units to get free delivery
In Stock
- 30 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | R 141.906 | R 4,257.18 |
| 90 - 120 | R 138.359 | R 4,150.77 |
| 150 + | R 134.208 | R 4,026.24 |
*price indicative
- RS stock no.:
- 219-6016
- Mfr. Part No.:
- IPW60R024CFD7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS CSFD | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Power Dissipation Pd | 320W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 21.1 mm | |
| Length | 16.13mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS CSFD | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Power Dissipation Pd 320W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 21.1 mm | ||
Length 16.13mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon CoolMOS CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Related links
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