Infineon OptiMOS 3 Type N-Channel MOSFET, 73 A, 80 V N, 3-Pin TO-252 IPD096N08N3GATMA1
- RS stock no.:
- 218-3038
- Mfr. Part No.:
- IPD096N08N3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 15 units)*
R 253,395
(exc. VAT)
R 291,405
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 11 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 16.893 | R 253.40 |
| 30 - 75 | R 16.471 | R 247.07 |
| 90 - 225 | R 15.977 | R 239.66 |
| 240 - 465 | R 15.338 | R 230.07 |
| 480 + | R 14.725 | R 220.88 |
*price indicative
- RS stock no.:
- 218-3038
- Mfr. Part No.:
- IPD096N08N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.6mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.6mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon N-Channel Power MOSFET. This MOSFET is ideal for high frequency switching applications.
Optimized technology for DC/DC converters
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V N, 3-Pin TO-252
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V N, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V N, 8-Pin TDSON BSC059N04LSGATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET & Diode 80 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET & Diode 80 V Enhancement, 3-Pin TO-263 IPB031N08N5ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252