Infineon 600V CoolMOS CE N-Channel MOSFET, 6.8 A, 600 V N, 3-Pin TO-220 IPA60R1K0CEXKSA1
- RS stock no.:
- 218-3001
- Mfr. Part No.:
- IPA60R1K0CEXKSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 229,86
(exc. VAT)
R 264,34
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 160 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 11.493 | R 229.86 |
| 40 - 80 | R 11.205 | R 224.10 |
| 100 - 220 | R 10.869 | R 217.38 |
| 240 - 480 | R 10.434 | R 208.68 |
| 500 + | R 10.017 | R 200.34 |
*price indicative
- RS stock no.:
- 218-3001
- Mfr. Part No.:
- IPA60R1K0CEXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 61W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 29.75mm | |
| Height | 16.15mm | |
| Standards/Approvals | No | |
| Width | 4.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series 600V CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 61W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 29.75mm | ||
Height 16.15mm | ||
Standards/Approvals No | ||
Width 4.9mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies . It is used in PFC stages, hard switching PWM stages and resonant switching stages, for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
Related links
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