Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V, 7-Pin TO-263 IRLS4030TRL7PP

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Subtotal (1 pack of 5 units)*

R 405,71

(exc. VAT)

R 466,565

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 81.142R 405.71
10 - 95R 79.114R 395.57
100 - 245R 76.74R 383.70
250 - 495R 73.67R 368.35
500 +R 70.724R 353.62

*price indicative

Packaging Options:
RS stock no.:
217-2642
Mfr. Part No.:
IRLS4030TRL7PP
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

190A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

4.1mΩ

Typical Gate Charge Qg @ Vgs

140nC

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

370W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.55 mm

Standards/Approvals

No

Height

15.3mm

Length

10.35mm

Automotive Standard

No

The Infineon 100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package.

Optimized for Logic Level Drive

Very Low RDS(ON) at 4.5V VGS

Superior R*Q at 4.5V VGS I

improved Gate, Avalanche and Dynamic dV/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

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