Infineon HEXFET N-Channel MOSFET, 522 A, 40 V Enhancement, 7-Pin TO-263
- RS stock no.:
- 215-2453
- Mfr. Part No.:
- AUIRFS8409-7TRL
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (800 units, on reels of 800)*
R 44 040,80
(exc. VAT)
R 50 647,20
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | R 55.051 | R 44,040.80 |
| 1600 - 1600 | R 53.675 | R 42,940.00 |
| 2400 + | R 52.064 | R 41,651.20 |
*price indicative
- RS stock no.:
- 215-2453
- Mfr. Part No.:
- AUIRFS8409-7TRL
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 522A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 305nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 522A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.75mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 305nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Automotive DirectFET® Power MOSFET has 60V maximum drain source voltage with 68A maximum continuous drain current in a D2-Pak 7pin package. specifically designed for automotive application, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance par silicon area. Additional features of these designs are 175°C junction operating temperature, fast switching speed and improve repetitive avalanche rating. This feature combined to make this product an extremely efficient and reliable device for use in automotive and wide variety of other applications.
Advanced Process Technology
New Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263 AUIRFS8409-7TRL
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 6-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 6-Pin TO-263 IRFS7430TRL7PP
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263 AUIRFS4115-7TRL
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263 AUIRFSA8409-7TRL
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 7-Pin TO-263