Infineon IPN Type N-Channel MOSFET, 4.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K2P7ATMA1
- RS stock no.:
- 217-2553
- Mfr. Part No.:
- IPN80R1K2P7ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 241,26
(exc. VAT)
R 277,44
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,920 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 12.063 | R 241.26 |
| 40 - 80 | R 11.762 | R 235.24 |
| 100 - 220 | R 11.409 | R 228.18 |
| 240 - 480 | R 10.952 | R 219.04 |
| 500 + | R 10.514 | R 210.28 |
*price indicative
- RS stock no.:
- 217-2553
- Mfr. Part No.:
- IPN80R1K2P7ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 6.8W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 6.8W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
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