Infineon IPD Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252 IPD80R2K7C3AATMA1

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Subtotal (1 pack of 20 units)*

R 317,38

(exc. VAT)

R 364,98

(inc. VAT)

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  • 4,620 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
20 - 20R 15.869R 317.38
40 - 80R 15.473R 309.46
100 - 220R 15.009R 300.18
240 - 480R 14.408R 288.16
500 +R 13.832R 276.64

*price indicative

Packaging Options:
RS stock no.:
217-2532
Mfr. Part No.:
IPD80R2K7C3AATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.7Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12nC

Maximum Power Dissipation Pd

42W

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Height

2.41mm

Automotive Standard

AEC-Q101

The Infineon CoolMOS™ C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

Best-in-class quality and reliability

Higher breakdown voltage

High peak current capability

Automotive AEC Q101 qualified

Green package (RoHS compliant)

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