Infineon IPD Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 24 092,50

(exc. VAT)

R 27 707,50

(inc. VAT)

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  • 2,500 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
2500 - 2500R 9.637R 24,092.50
5000 - 5000R 9.396R 23,490.00
7500 +R 9.114R 22,785.00

*price indicative

RS stock no.:
217-2531
Mfr. Part No.:
IPD80R2K7C3AATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

800V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.7Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

42W

Maximum Operating Temperature

150°C

Height

2.41mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

AEC-Q101

The Infineon CoolMOS™ C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

Best-in-class quality and reliability

Higher breakdown voltage

High peak current capability

Automotive AEC Q101 qualified

Green package (RoHS compliant)

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